谷继腾,杨 扬,蒋春磊,石 磊,牛卉卉,唐永炳.面向化学气相沉积生长单晶金刚石的高导热嵌入型 基片托盘设计及其高质量生长工艺研究[J].集成技术,2017,6(4):38-48
面向化学气相沉积生长单晶金刚石的高导热嵌入型 基片托盘设计及其高质量生长工艺研究
Study on the Synthesis of High Quality Single Crystal Diamond byChemical Vapor Deposition Using the Embeded Type of SubstrateHolder with Highly Thermal Conductivity
投稿时间: 2017-04-12  最后修改时间: 2017-05-27
DOI:
中文关键词:  单晶金刚石;同质外延生长;微波等离子体化学气相沉积;基片托盘设计;高功率密度
英文关键词:single crystal diamond; homoepitaxial growth; microwave plasma chemical vapor deposition;
基金项目:国家自然科学基金项目( 5 1 4 0 2 3 4 4 ) ; 广东省创新团队项目( 2 0 1 3 C 0 9 0 ) ; 深圳市技术创新计划技术攻关项目 (JSGG20160301173854530);深圳市海外高层次人才创新创业计划(KQJSCX20160301145319);深圳市基础研究项目(JCYJ20160122143847150)
作者单位
谷继腾 中国科学院深圳先进技术研究院 功能薄膜材料研究中心 深圳 518064 
杨 扬 中国科学院深圳先进技术研究院 功能薄膜材料研究中心 深圳 518065 
蒋春磊 中国科学院深圳先进技术研究院 功能薄膜材料研究中心 深圳 518066 
石 磊 中国科学院深圳先进技术研究院 功能薄膜材料研究中心 深圳 518067 
牛卉卉 中国科学院深圳先进技术研究院 功能薄膜材料研究中心 深圳 518068 
唐永炳 中国科学院深圳先进技术研究院 功能薄膜材料研究中心 深圳 518069 
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中文摘要:
      针对高功率密度微波等离子体化学气相沉积法生长单晶金刚石过程中,金刚石籽晶表面温度 容易发生漂移的问题,提出了一种新的基片托盘结构设计方法。基片托盘中间采用通孔结构,以避免籽 晶底部与钼托盘的直接接触,在基片托盘与水冷台之间、籽晶和水冷台之间添加高导热材料氮化铝片, 以保证外延沉积金刚石所需的均匀温度场环境。实验结果显示,利用新型基片托盘可以连续工作 48 h, 并获得生长厚度达 1.66 mm 的单晶金刚石,经过多次反复生长可实现厚度 3 mm 的高质量单晶金刚石制 备。新型基片托盘能有效地抑制生长过程中石墨等大颗粒煤烟沉积引起的温度漂移现象,满足不同条件 下金刚石单晶的同质外延生长,抑制籽晶边沿处多晶金刚石的生成,从而保证金刚石单晶在高功率密度 下长时间稳定生长,获得高质量、大尺寸的化学气相沉积单晶金刚石。
英文摘要:
      In this paper, a new structure was designed and tested for the substrate holder of crystal diamondEffect of the proposed substrate holder was verified by several experiments. The experiments related to single diamonds were carried out on the traditional and the proposed substrate holders respectively. The experimental results show that the single diamond with the thickness of 1.66 mm is obtained by continually growing of 48 h, and achieved the high quality single diamond of 3 mm by repeating the growth on the proposed substrate holder. The proposed substrate holder can restrain the occurrence of temperature drifting of large grains during the deposited process and provide a suitable environment for diamond homoepitaxial growth. The polycrystalline diamonds around diamond seeds can be suppressed and high purity chemical vapor deposition single diamonds with thickness of larger than 3 mm can be successfully fabricated by the proposed substrate holder and high power density microwave plasma chemical vapor deposition method. seeds to solve the problems of inhomogeneously distributed temperature. A through-hole was drilled on the substrate holder, and the AlN sheets were added to the contacted areas where the diamond epitaxial growth process was carrying out. With such a substrate holder structure, direct contact between diamond seeds and substrate can be avoided, so as to ensure the essentially homogeneous temperature distributions simutaneouslyEffect of the proposed substrate holder was verified by several experiments. The experiments related to single diamonds were carried out on the traditional and the proposed substrate holders respectively. The experimental results show that the single diamond with the thickness of 1.66 mm is obtained by continually growing of 48 h, and achieved the high quality single diamond of 3 mm by repeating the growth on the proposed substrate holder. The proposed substrate holder can restrain the occurrence of temperature drifting of large grains during the deposited process and provide a suitable environment for diamond homoepitaxial growth. The polycrystalline diamonds around diamond seeds can be suppressed and high purity chemical vapor deposition single diamonds with thickness of larger than 3 mm can be successfully fabricated by the proposed substrate holder and high power density microwave plasma chemical vapor deposition method.
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