国家自然科学基金项目( 5 1 4 0 2 3 4 4 ) ； 广东省创新团队项目( 2 0 1 3 C 0 9 0 ) ； 深圳市技术创新计划技术攻关项目 (JSGG20160301173854530)；深圳市海外高层次人才创新创业计划(KQJSCX20160301145319)；深圳市基础研究项目(JCYJ20160122143847150)
硼(B)掺杂金刚石薄膜因其优异的电化学性能在电化学传感领域获得了广泛的应用。文章采用 微波等离子体化学气相沉积法制备硼掺杂金刚石薄膜，通过硼/碳(B/C)比例和工艺参数的调节，成功制 备了具备(100)择优取向的金刚石薄膜，分析了 B 元素影响(100)晶面形成的机理，并进一步探讨了衬底 温度、碳源浓度对金刚石薄膜微观形貌的影响。实验发现：B/C 比例浓度对金刚石薄膜形貌的影响要大 于温度、CH4 浓度等其他参数，尤其当 B/C＝4 000 ppm 时，形成的四面体形状金刚石颗粒质量最好，晶 棱清晰可见，晶面光滑平整；当 B/C 浓度恒定时，温度与 CH4 浓度对金刚石薄膜的影响都是通过影响二 次形核密度实现的。研究表明，通过适合的硼掺杂比例可以实现高择优取向金刚石薄膜电极的制备。
Boron doped diamond thin films have been widely used in the electrochemical sensing applications for its outstanding electrochemical properties. In this work, the preferred (100) growth orientation of boron doped diamond films was successfully synthesized by applying different boron/carbon (B/C) concentration ratio in a homemade microwave plasma enhanced chemical vapor deposition system and its formation mechanisms was further studied. Moreover, the influences from substrate temperature and carbon source concentration were also debated to achieve better (100)-oriented diamond. The experimental results showed that B/C concentration ratio played a more important role on diamond morphology compared with substrate temperature and carbon sourceconcentration. While the B/C concentration ratio was constant with 4 000 ppm, crystal edges and face of the tetrahedral diamond particles became smoother and flatter, which indicated quality improvement of the obtained diamond particles. Keeping the B/C concentration constant, the secondary diamond nucleation density was enhanced when the temperature and carbon source concentration were increased. The results show that the highly oriented diamond thin film electrodes could be obtained by applying appropriate B/C concentration ratios.
谷继腾,杨 扬,唐永炳,张文军.硼掺杂对微波等离子体化学气相沉积制备 金刚石薄膜高择优取向生长的影响 [J].集成技术,2017,6(4):61-69
GU Jiteng, YANG Yang, TANG Yongbing, ZHANG Wenjun. Effect of Boron Concentration on the Preferred Orientation of Diamond Films Deposited Using Microwave Plasma Enhanced Chemical Vapor Deposition[J]. Journal of Integration Technology,2017,6(4):61-69