电化学蚀刻钽箔制备高容量薄膜钽电解电容器
电化学蚀刻钽箔制备高容量薄膜钽电解电容器
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国家重点研发计划项目(2017YFB0406300)

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High-Capacitance Thin Film Tantalum Electrolytic Capacitor Fabricated from Electrochemically Etched Tantalum Foils
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the National Key R & D Project from Minister of Science and Technology of China (2017YFB0406300)

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    摘要:

    钽电解电容器具有较高的电容密度和较好的稳定性,将钽电解电容器制作成埋入式电容能够 扩展钽电容的应用。传统钽电容经钽粉压块、烧结、被膜等工艺制作而成,其具有较大的尺寸而不能 被埋入到电路板或者基板内部。该研究探索了电化学蚀刻钽箔的方法来制作钽电解电容阳极并进一步 制作成片状埋入式钽电解电容器。在 0.1 mol/L 稀硫酸水溶液中测试经蚀刻并氧化后的钽箔阳极,得到 最大比电容为 74 nF/mm2。将该钽箔阳极制备成钽电解电容器件,测试结果显示电容器件在 100 Hz~1 MHz 的电容值>30 nF/mm2;持续施加 10 V 直流电压 1 200 s,其漏电流最大为 2.7×10-6 A,薄膜电容的总厚度约为 75 μm。

    Abstract:

    The use of Tantalum (Ta) electrolytic capacitors as embedded components constitutes a promising strategy to extend the application of embedded capacitors, because Ta electrolytic capacitor can provide both high capacitance and excellent stability. However, the huge thickness of conventional Ta electrolytic capacitor makes it hard to be embedded in a printed circuit board or substrate. In this work, we propose to employ the electrochemical etching of thin Ta foils to fabricate the anode of Ta electrolytic capacitors for embedded application.The specific capacitance of electrochemically etched Ta anode reaches as high as 74 nF/mm2 when measured in 0.1 mol/L H2SO4.The etched Ta anode is then fabricated into electrolytic capacitors, and a stable capacitance of >30 nF/mm2 is demonstrated in the frequency range from 100 Hz to 1 MHz and a low leakage current of 2.7×10-6 A for a duration of 1 200 seconds at a direct voltage (DC) of 10 V. The whole thickness of the capacitor is decreased to~75 μm.

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引文格式
郭永富,王日明,于淑会,初宝进,孙 蓉.电化学蚀刻钽箔制备高容量薄膜钽电解电容器 [J].集成技术,2021,10(1):35-46

Citing format
GUO Yongfu, WANG Riming, YU Shuhui, CHU Baojin, SUN Rong. High-Capacitance Thin Film Tantalum Electrolytic Capacitor Fabricated from Electrochemically Etched Tantalum Foils[J]. Journal of Integration Technology,2021,10(1):35-46

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  • 在线发布日期: 2021-01-26
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