Abstract: Memristor, as the fourth fundamental circuit element (resistor, capacitor, inductor and memristor), possessing non-volatile characteristics, is expected to be one kind of the basic devices of brain-like computing circuits. Compared with traditional complementary metal oxide semiconductor (CMOS) devices, its switch performance and size need to be further improved. Ge2Sb2－xBixTe5(x＝0, 0.2) material can undergo reversible phase change under thermal effect, and can also be crystallized under femtosecond laser treatment. To provide a basis for high performance and high integration of brain-like circuits, this work proposes the one-dimension nanowire-based memristor. Firstly, the Ge2Sb2－xBixTe5(x＝0, 0.2) material was analyzed by X-ray diffraction analysis, Raman scattering, scanning electron microscope, atomic force microscope and Hall effect test. The results show that Bi doping could reduce the crystalline temperature, increase the resistivity and the phase transition temperature, while the lattice structure is unchanged. Secondly, the 500 nm width Ge2Sb2－xBixTe5 nanobelt was obtained via ourself-made femtosecond laser nano fabrication system. Finally, a resistance switch ratio up to 7 400 was observed in a Ag/Ge2Sb2－xBixTe5/Ag memristor, with a stable cycle of 60 cycles, maintaining 3 250 s.