Abstract: Short-wave infrared photoelectric technology has shown broad application prospects in medical diagnosis, remote sensing detection, infrared imaging and other fields. Traditional infrared materials ( such as InGaAs and HgCdTe ) have high cost, complex process, and difficulty in integrating with silicon-based CMOS, which limits their further development. As a new semiconductor material with solution processability, adjustable band gap and compatibility with CMOS process, colloidal quantum dots provide a feasible path of low cost and monolithic integration for short-wave infrared photoelectric detection and imaging. In this paper, the photoelectric properties, device structure design and latest progress in monolithic integration of colloidal quantum dot materials such as PbS and HgTe are reviewed, and the application of artificial intelligence technology in photoelectric sensor optimization and intelligent perception is discussed. Finally, the paper points out the challenges faced by the current technology and looks forward to the future development direction.