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定向生长碳纳米管阵列热界面材料技术研究

Study on Thermal Interface Material Using Vertically Aligned Carbon Nanotube

  • 摘要: 热界面材料技术是三维系统级封装中的关键技术。文章采用新型定向生长碳纳米管阵列方法制备了热界面材料, 并研究了其导热性能。实验结果表明, 通过采用 50/100/100 nm 厚的 Ti/Ni/Au 金属层和 Sn64Bi35Ag1 导热焊料, 可成功实现碳纳米管阵列的 100% 转移;通过热释放胶带(Nitto Denko, Part Number: #3198MS)可获得悬浮碳纳米管阵列。文章还通过 LFA 447 激光导热仪分别测量了热界面材料在 25℃、75℃ 和 125℃ 下的热扩散系数, 并计算了其表观热导率, 还进行了热循环可靠性测试。结果表明, 所选用碳纳米管阵列的表观热导率高于42 W/(m·K), 200 次热循环后的表观热导率高于 41 W/(m·K);转移后的碳纳米管阵列的表观热导率高于 28 W/(m·K), 200 次热循环后仍高于 24 W/(m·K)。

     

    Abstract: Thermal interface material (TIM) technology is of great importance in the 3D system packaging. In this paper, the preparation of thermal interface materials using vertically aligned carbon nanotube (VACNT) array and its characterization were investigated. The transfer process of VACNT was successfully performed by a Ti/Ni/Au metal layer with a thickness of 50/100/100 nm and Sn64Bi35Ag1 solder. A thermal release adhesive tape (Nitto Denko, Part Number: #3198MS) was used to obtain suspended VACNT array. The LFA 447 was used to characterize the thermal diffusivity α(T) and apparent thermal conductivity λ(T) of VACNT array at 25℃, 75℃ and 125℃, respectively. Thermal cycle reliability test was also carried out. Results show that the apparent λ(T) is over 42 W/(m·K) for VACNT array on the Si growth substrate and over 41 W/(m·K) for transferred CNT array. After 200 thermal cycles, the λ(T) is over 28 W/(m·K) for CNT array on its Si growth substrate and over 24 W/(m·K) for transferred CNT array.

     

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