In this paper, the process steps of plasma-assisted wafer destaticization after plasma etching and destaticization were studied and optimized. Through the data simulation and experimental design, the effects of plate spacing, reaction chamber pressure, radio frequency (RF) power supply and RF power off mode on the residual charge of the wafer were studied. Firstly, the plasma distribution of the reaction chamber in the destaticization process was simulated by Monte Carlo random number method based on software Pegasus. The plasma energy distribution map was studied and the plate spacing and plasma distribution uniformity were analyzed. The relationship had been obtained with the best range of plate spacing. Secondly, the reaction chamber pressure, RF power and plate spacing were used as experimental variables, and the experimental obtained. The results of this paper could be used to optimize the wafer destaticization step and improve process reliability and product yield. group with the lowest residual charge was obtained through experimental design. Finally, based on the experimental group, the RF power supply shutdown mode was optimized. By detecting the potential difference when the wafer was detached from the adsorption device, the optimal RF power supply shutdown mode was