Novel materials such as silicon-based, graphene, tellurium compounds, transition metal dihalogenated compounds and perovskites have unique structures and properties, and are important materials for the preparation of low-power and high-performance photodetectors. In this paper, silicon-based structures based on PN and PiN heterojunction structures are reviewed research progress of near-infrared photodetectors, as well as the latest research progress of near-infrared photodetectors based on two-dimensional materials, such as graphene, tellurium compounds, transition metal dihalogenated compounds and perovskite materials, and compare and analyze the performance parameters of related near-infrared photodetectors, which can provide ideas and references for the follow-up research of high-performance near-infrared photodetectors.