飞秒激光制备基于 Ge2Sb2 - xBixTe5(x = 0, 0.2)材料忆阻器的研究
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深圳市基础研究项目(JCYJ20170413153246713);深圳市孔雀计划创新项目(KQJSCX20170731165602155)

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Research on Fabrication of Memristor by Femtosecond Laser Based on Ge2Sb2 - xBixTe5(x = 0, 0.2) Material
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    摘要:

    忆阻器作为除电阻、电容、电感外的第四种电路元件,具有非易失性的记忆特征,有望成为 类脑计算电路的基础元件。相对于传统互补金属氧化物半导体(CMOS)器件,其在开关性能和工艺尺寸等方面仍需进一步提升。Ge2Sb2-xBixTe5(x=0, 0.2)材料在热效应下可进行可逆相变,也可在飞秒激光处 理下进行结晶。该文提出基于 Ge2Sb2-xBixTe5(x=0, 0.2)一维纳米线结构的忆阻器,为实现高性能与高集 成度的类脑电路提供了基础。首先,利用 X 射线衍射分析、拉曼散射、扫描电子显微镜、原子力显微镜、霍尔效应测试等技术对 Ge2Sb2-xBixTe5(x=0, 0.2)材料进行了分析。结果显示,少量铋(Bi)元素的掺 杂可以降低材料的结晶温度,提高电阻率及材料的相变结晶速度,而晶格结构未改变。然后,在对材料表征的基础上,利用自制的飞秒激光纳米加工系统制备了宽度为 500 nm 的 Ge2Sb2-xBixTe5(x=0, 0.2)纳米带。最后,设计并制备了完整的 Ag/Ge2Sb2-xBixTe5/Ag 忆阻器,其电阻开关比可达~7 400,稳定循 环了 60 圈,保持了 3 250 s。

    Abstract:

    Memristor, as the fourth fundamental circuit element (resistor, capacitor, inductor and memristor), possessing non-volatile characteristics, is expected to be one kind of the basic devices of brain-like computing circuits. Compared with traditional complementary metal oxide semiconductor (CMOS) devices, its switch performance and size need to be further improved. Ge2Sb2-xBixTe5(x=0, 0.2) material can undergo reversible phase change under thermal effect, and can also be crystallized under femtosecond laser treatment. To provide a basis for high performance and high integration of brain-like circuits, this work proposes the one-dimension nanowire-based memristor. Firstly, the Ge2Sb2-xBixTe5(x=0, 0.2) material was analyzed by X-ray diffraction analysis, Raman scattering, scanning electron microscope, atomic force microscope and Hall effect test. The results show that Bi doping could reduce the crystalline temperature, increase the resistivity and the phase transition temperature, while the lattice structure is unchanged. Secondly, the 500 nm width Ge2Sb2-xBixTe5 nanobelt was obtained via ourself-made femtosecond laser nano fabrication system. Finally, a resistance switch ratio up to 7 400 was observed in a Ag/Ge2Sb2-xBixTe5/Ag memristor, with a stable cycle of 60 cycles, maintaining 3 250 s.

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引文格式
王恒,戴阳,黄建平,等.飞秒激光制备基于 Ge2Sb2 - xBixTe5(x = 0, 0.2)材料忆阻器的研究 [J].集成技术,2019,8(6):48-64

Citing format
WANG Heng, DAI Yang, HUANG Jianping, et al. Research on Fabrication of Memristor by Femtosecond Laser Based on Ge2Sb2 - xBixTe5(x = 0, 0.2) Material[J]. Journal of Integration Technology,2019,8(6):48-64

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  • 在线发布日期: 2019-11-19
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