The rapid development of third-generation semiconductors and power devices has put forward new requirements for packaging interconnection technology. Nano-copper and silver sintering interconnections have become the key technology to further breakthroughs in third-generation semiconductor packaging due to their excellent electrical conductivity, thermal conductivity, and hightemperature service characteristics. Compared to nano-silver, the nano-copper sintering technology has obvious advantages such as low-cost and better resistance to electromigration. However, the preparation, collection and oxidation resistance of small-sized copper nanoparticles are difficult to guarantee, which will affect the low-temperature sintering performance, and the reliability of use and storage. This paper reviews the latest research results of nano-copper sintering technology for third-generation semiconductor and power device packaging in recent years, analyzes the scale effect, the influence of copper oxide on sintering temperature and diffusion, and summarizes the advantages and characteristics of multiple technologies such as nano-modification of bonding surface, preparation and sintering of copper nano-solder, and self-reduction of copper nano-solder, prospects the research direction of nano-copper sintering technology for further industrial application.