金刚石热沉与半导体器件连接技术研究现状与发展趋势
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国家自然科学基金项目(52102055, 5227020331, 52075527);国家重点研发计划项目(2017YFB0406000, 2017YFE0128600)

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Research Status and Development Trend of Connection Technology of Diamond Heat Sink and Semiconductor Device
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This work is supported by National Natural Science Foundation of China (52102055, 5227020331, 52075527), National Key R&D Program of China (2017YFB0406000, 2017YFE0128600)

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    摘要:

    半导体器件的集成化和小型化不可避免地导致散热问题发生。热量的持续累积威胁着电子的性能、稳定性和寿命。因此,提高电子器件的散热能力对其稳定运行至关重要。金刚石作为一种高效的散热衬底,具有众多无可比拟的优势,越来越受到人们关注。该文综述了金刚石作为半导体高功率器件热沉的研究进展,简要介绍了金刚石与半导体器件的连接方式,总结了金刚石基半导体器件面临的技术挑战,展望了其未来发展方向。

    Abstract:

    The integration and miniaturization of semiconductor devices have led to a significant increase in heat dissipation issues. The continuous accumulation of heat threatens the performance, stability and lifespan of electronics, making it imperative to enhance the heat dissipation capability of electronic devices to ensure their stable operation. In recent years, diamond has emerged as a highly efficient heat dissipation substrate with numerous unparalleled advantages. This paper provides a comprehensive review of the latest research on diamond as a heat sink for high-power semiconductor devices and briefly discusses the methods of connecting diamond to semiconductor devices. Additionally, the current technical challenges and promising development direction for diamond-based semiconductor devices are discussed.

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引文格式
代文,林正得,易剑.金刚石热沉与半导体器件连接技术研究现状与发展趋势 [J].集成技术,2023,12(5):27-40

Citing format
DAI Wen, LIN Chengte, YI Jian. Research Status and Development Trend of Connection Technology of Diamond Heat Sink and Semiconductor Device[J]. Journal of Integration Technology,2023,12(5):27-40

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  • 在线发布日期: 2023-09-22
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